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BTS5235-2G smart high-side power switch data sheet, rev.1.1, sep 2008 automotive power
data sheet 2 rev.1.1, 2007-09-01 smart high-side power switch BTS5235-2G table of contents 1 overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3.1 pin assignment BTS5235-2G . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3.2 pin definitions and functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4.1 absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 5 block description and electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5.1 power stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5.1.1 output on-state resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5.1.2 input circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5.1.3 inductive output clamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5.1.4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 5.2 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 protection functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6.1 over load protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6.2 reverse polarity protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6.3 over voltage protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6.4 loss of ground protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6.5 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 7 diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 7.1 on-state diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 7.2 off-state diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 7.3 sense enable function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 7.4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 8 package outlines BTS5235-2G . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 9 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 table of contents
pg-dso-20-43 type package marking BTS5235-2G pg-dso-20-43 BTS5235-2G data sheet 3 rev.1.1, 2007-09-01 smart high-side power switch profet two channels, 60 m ? BTS5235-2G 1overview basic features ? very low standby current ? 3.3 v and 5 v compatible logic pins ? improved electromagnetic compatibility (emc) ? stable behavior at under voltage ? logic ground independent from load ground ? secure load turn-off while logic ground disconnected ? optimized inverse current capability ? green product (rohs compliant) ? aec qualified product summary the BTS5235-2G is a dual channel high-side power switch in pg-dso-20-43 package providing embedded protective functions. the power transistor is built by a n-channel vert ical power mosfet with charge pump. the device is monolithically inte grated in smart sipmos technology. operating voltage v bb(on) 4.5 ? 28 v over voltage protection v bb(az) 41 v on-state resistance r ds(on) 60 m ? nominal load current (one channel active) i l(nom) 3.3 a current limitation i l(lim) 23 a current limitat ion repetitive i l(scr) 6a standby current for whole device with load i bb(off) 2.5 a
smart high-side power switch BTS5235-2G overview data sheet 4 rev.1.1, 2007-09-01 protective functions ? reverse battery protection without external components ? short circuit protection ? overload protection ? multi-step current limitation ? thermal shutdown with restart ? thermal restart at reduced current limitation ? over voltage protection without external resistor ? loss of ground protection ? electrostatic discha rge protection (esd) diagnostic functions ? enhanced intellisense si gnal for each channel ? enable function for diagnosis pins (is1 and is2) ? proportional load current se nse signal by current source ? high accuracy of current sense signal at wide load current range ? open load detection in on-state by load current sense ? over load (current limitatio n) diagnosis in on-state, signalling by voltage source ? latched over temperature diagnosis in on-state, si gnalling by voltage source ? open load detection in off-stat e, signalling by voltage source applications ? c compatible high-side power switch with diagnostic feedback for 12 v grounded loads ? all types of resistive, in ductive and capacitive loads ? suitable for loads with high in rush currents, so as lamps ? suitable for loads with low currents, so as leds ? replaces electromechanical relays, fuses and discrete circuits
data sheet 5 rev.1.1, 2007-09-01 smart high-side power switch BTS5235-2G block diagram 2 block diagram the BTS5235-2G is a dual channel high -side power switch (two times 60 m ? ) in pg-dso-20-43 package providing embedded protective functions. the enhanced intellisense pins is1 and is2 provide a soph isticated diagnostic feedbac k signal including current sense function, over load and over temperature alerts in on-state and open load alert in off-state. the diagnosis signals can be switched on and off by the sense enable pin sen. an integrated ground resistor as well as integrated resistors at each input pin (in1, in2, sen) reduce external components to a minimum. the power transistor is built by a n-chan nel vertical power mosfet with charge pump. the inputs are ground referenced cmos compatible. th e device is monolithically integrated in smart sipmos technology. figure 1 block diagram channel 1 internal power supply esd protection out2 channel 2 contr ol and protection cir cuit equivalent to channel 1 in1 is1 sen gnd r gnd is2 in2 open load detection logic gate control & char ge pump vbb out1 clamp for inductive load multi step load current limitation load current sense over load detection temperature sensor
smart high-side power switch BTS5235-2G block diagram data sheet 6 rev.1.1, 2007-09-01 2.1 terms following figure shows all terms used in this data sheet. figure 2 terms in all tables of electrical characteri stics is valid: channel related symbols without channel number are valid for each channel separately. terms2ch.emf i in1 v in1 out1 i in2 v in2 v is1 i is1 v is2 i is2 v bb v sen i sen i l1 v out2 v out1 v ds2 v ds1 i l2 gnd i gnd i bb in1 in2 is1 is2 sen vbb out2 BTS5235-2G
data sheet 7 rev.1.1, 2007-09-01 smart high-side power switch BTS5235-2G pin configuration 3 pin configuration 3.1 pin assignment BTS5235-2G figure 3 pin configuration pg-dso-20-43 3.2 pin definitions and functions pin symbol i/o function 4 in1 i input signal for channel 1 7 in2 i input signal for channel 2 5 is1 o diagnosis output signal channel 1 6 is2 o diagnosis output signal channel 2 8 sen i sense enable input for channel 1&2 17, 18 ,19 out1 1) 1) all output pins of each channel have to be connected o protected high-side power output channel 1 12, 13, 14 out2 1) o protected high-side power output channel 2 3 gnd ? ground connection 1, 10, 11, 15, 16, 20 vbb 2) 2) all vbb pins have to be connected ? positive power supply for logic s upply as well as output power supply 2, 9 nc ? not connected (top view) out1 out1 out1 vbb vbb vbb 20 19 18 17 16 15 gnd in1 is1 is2 vbb in2 1 2 3 4 5 6 nc nc vbb sen 7 8 9 10 14 13 12 11 out2 out2 out2 vbb
smart high-side power switch BTS5235-2G electrical characteristics data sheet 8 rev.1.1, 2007-09-01 4 electrical characteristics 4.1 absolute maximum ratings absolute maximum ratings 1) t j = -40 c to +150 c; all voltages with respect to groun d, positive current flowing into pin (unless otherwise specified) 1) not subject to production test, specified by design. pos. parameter symbol limit values unit conditions min. max. supply voltage 4.1.1 supply voltage v bb -16 28 v 4.1.2 supply voltage for fu ll short circuit protection (single pulse) ( t j(0) = -40 c .. 150 c) v bb(sc) 028v l = 8 h, r = 0.2 ? 2) 4.1.3 voltage at power transistor v ds ?52v 4.1.4 supply voltage for load dump protection v bb(ld) ?41v r i = 2 ? 3) r l = 6.8 ? power stages 4.1.5 load current i l ? i l(lim) a 4) 4.1.6 maximum energy dissipation single pulse e as ?110mj i l (0) = 2 a 5) t j (0) = 150 c v bb =13,5v 4.1.7 power dissipation (dc) p tot ?1.4w t a = 85 c 6) t j 150 c logic pins 4.1.8 voltage at input pin v in -5 -16 10 v t 2min. 4.1.9 current through input pin i in -2.0 -8.0 2.0 ma t 2min. 4.1.10 voltage at sense enable pin v sen -5 -16 10 v t 2min. 4.1.11 current through sense enable pin i sen -2.0 -8.0 2.0 ma t 2min. 4.1.12 current through sense pin i is -25 10 ma temperatures 4.1.13 junction temperature t j -40 150 c 4.1.14 dynamic temperature increase while switching ? t j ?60 c 4.1.15 storage temperature t stg -55 150 c esd susceptibility 4.1.16 esd susceptibility hbm in, sen is out v esd -1 -2 -4 1 2 4 kv according to eia/jesd 22-a 114b
data sheet 9 rev.1.1, 2007-09-01 smart high-side power switch BTS5235-2G electrical characteristics note: stresses above the ones listed here may cause perm anent damage to the device. exposure to absolute maximum rating conditions for extended periods may affect device reliability. note: integrated protection functions are designed to prevent ic destruction under fault conditions described in the data sheet. fault conditions are considered as ?outside? normal operating range. protection functions are not designed for continuous repetitive operation. 2) r and l describe the complete circuit impedance incl uding line, contact and generator impedances 3) load dump is specified in iso 7636, r i is the internal resistance of the load dump pulse generator 4) current limitation is a protection featur e. operation in current limit ation is considered as ?out side? normal operating range . protection features are not designed for continuous repetitive operation. 5) pulse shape represents inductive switch off: i l (t) = i l (0) * (1 - t / t pulse ); 0 < t < t pulse 6) device mounted on pcb (50 mm 50 mm 1.5mm epoxy, fr4) with 6 cm 2 copper heatsinking area (one layer, 70 m thick) for v bb connection. pcb is vertical without blown air.
smart high-side power switch BTS5235-2G block description and electrical characteristics data sheet 10 rev.1.1, 2007-09-01 5 block description and el ectrical characteristics 5.1 power stages the power stages are built by n-channel vertic al power mosfets (dmos) with charge pumps. 5.1.1 output on-state resistance the on-state resistance r ds(on) depends on the supply voltage as well as the junction temperature t j . figure 4 shows that dependencies for the typical on-state resistan ce. the behavior in reverse polarity mode is described in section 6.2 . figure 4 typical on-state resistance 5.1.2 input circuit figure 5 shows the input circuit of the BTS5235-2G. there is an integrated input resistor that makes external components obsolete. the current sink to ground ensures th at the device switches off in case of open input pin. the zener diode protects the in put circuit against esd pulses. figure 5 input circuit (in1 and in2) 30 40 50 60 70 80 90 -50 -25 0 25 50 75 100 125 150 r ds(on) /m ? t / c 40 60 80 100 120 140 160 0 5 10 15 20 25 r ds(on) /m ? v bb /v v bb = 13.5 v t j = 25 c in r in i in gnd r gnd input.emf
data sheet 11 rev.1.1, 2007-09-01 smart high-side power switch BTS5235-2G block description and electrical characteristics a high signal at the input pin causes the power dmos to switch on with a dedicated slope, which is optimized in terms of emc emission. figure 6 switching a load (resistive) 5.1.3 inductive output clamp when switching off inductive loads with high-side switches, the voltage v out drops below ground potential, because the inductance intends to continue driving the current. figure 7 output clamp (out1 and out2) to prevent destruction of the device, there is a voltage clamp mechanism implemented that keeps that negative output voltage at a certain level ( v out(cl) ). see figure 7 and figure 8 for details. nevertheless, the maximum allowed load induct ance is limited. figure 8 switching an inductance in v out t switchon.emf t on t off t 90% 10% 70% d v /d t on 30% 70% d v /d t off 30% out put clamp. emf out gnd v bb vbb l , r l v out i l v out i nduct iveload. emf t i l t v out(cl) v bb in = 5v in = 0v 0
smart high-side power switch BTS5235-2G block description and electrical characteristics data sheet 12 rev.1.1, 2007-09-01 maximum load inductance while demagnetization of inductive loads, energy has to be dissipated in the BTS5235-2G. this energy can be calculated with following equation: (1) this equation simplifies under the assumption of r l = 0: (2) the energy, which is converted into heat, is lim ited by the thermal desi gn of the component. see figure 9 for the maximum allowed energy dissipation. figure 9 maximum energy di ssipation single pulse, t j,start = 150 c ev bb v out(cl) ? () v out(cl) r l ---------------------- - ln ? 1 r l i l ? v out(cl) ---------------------- - ? ?? ?? ?? i l + l r l ------ ?? = e 1 2 -- - li l 2 1 v bb v out(cl) ---------------------- - ? ?? ?? ?? ? = vbb = 13.5v 1 10 100 1000 10000 024681012 il [a] eas [ mj]
data sheet 13 rev.1.1, 2007-09-01 smart high-side power switch BTS5235-2G block description and electrical characteristics 5.1.4 electrical characteristics unless otherwise specified: v bb = 9 v to 16 v, t j = -40 c to +150 c, typical values: v bb = 13.5 v, t j = 25 c pos. parameter symbol limit values unit test conditions min. typ. max. general 5.1.1 operating voltage v bb 4.5 ? 28 v v in = 4.5 v r l = 12 ? v ds < 0.5 v 5.1.2 operating current one channel active all channels active i gnd ? ? 1.8 3.6 4.0 8.0 ma v in = 5 v 5.1.3 standby current for whole device with load i bb(off) ? ? ? 1.5 ? ? 2.5 2.5 15 a v in = 0 v v sen = 0 v t j = 25 c t j = 85 c 1) t j = 150 c output characteristics 5.1.4 on-state resi stance per channel r ds(on) ? ? 45 90 60 115 m ? i l = 2.5 a t j = 25 c t j = 150 c 5.1.5 output voltage drop limitation at small load currents v ds(nl) ?40?mv i l < 0.25 a 5.1.6 nominal load current per channel one channel active two channels active i l(nom) 3.3 2.5 ? ? ? ? a t a = 85 c t j 150 c 2) 3) 5.1.7 output clamp v out(cl) -24 -20 -17 v i l = 40 ma 5.1.8 output leakage current per channel i l(off) ?0.16.0 a v in = 0 v 5.1.9 inverse current capability - il(inv) ?3?a 1) input characteristics 5.1.10 input resistor r in 1.8 3.5 5.5 k ? 5.1.11 l-input level v in(l) -0.3 ? 1.0 v 5.1.12 h-input level v in(h) 2.5?5.7v 5.1.13 l-input current i in(l) 31875 a v in = 0.4 v 5.1.14 h-input current i in(h) 10 38 75 a v in = 5 v timings 5.1.15 turn-on time to 90% v bb t on ?100250 s r l = 12 ? v bb = 13.5 v 5.1.16 turn-off time to 10% v bb t off ?120250 s r l = 12 ? v bb = 13.5 v
smart high-side power switch BTS5235-2G block description and electrical characteristics data sheet 14 rev.1.1, 2007-09-01 note: characteristics show the deviat ion of parameter at the given supply voltage and junction temperature. typical values show the typical param eters expected from manufacturing. 5.2 thermal resistance 5.1.17 slew rate 30% to 70% v bb d v / dton 0.10.250.5v/ s r l = 12 ? v bb = 13.5 v 5.1.18 slew rate 70% to 30% v bb -d v / dtoff 0.10.250.5v/ s r l = 12 ? v bb = 13.5 v 1) not subject to production test, specified by design 2) device mounted on pcb (50 mm 50 mm 1.5mm epoxy, fr4) with 6 cm 2 copper heatsinking area (one layer, 70 m thick) for v bb connection. pcb is vertical without blown air. 3) not subject to production test, parameters are calculated from r ds(on) and r th pos. parameter symbol limit values unit conditions min. typ. max. 5.2.1 junction to case 1) 1) not subject to production test, specified by design. r thjc ??35 k/w? 5.2.2 junction to ambient one channel active all channels active r thja ? ? ? 48 45 ? ? ? k/w 2) 2) device mounted on pcb (50 mm 50 mm 1.5mm epoxy, fr4) with 6 cm 2 copper heatsinking area (one layer, 70 m thick) for v bb connection. pcb is vertical without blown air. unless otherwise specified: v bb = 9 v to 16 v, t j = -40 c to +150 c, typical values: v bb = 13.5 v, t j = 25 c pos. parameter symbol limit values unit test conditions min. typ. max.
data sheet 15 rev.1.1, 2007-09-01 smart high-side power switch BTS5235-2G protection functions 6 protection functions the device provides embedded protecti ve functions. integrat ed protection functions are designed to prevent ic destruction under fault conditions described in the data sheet. fault conditions are considered as ?outside? normal operating range. protection functions are neither designed for continuous nor repetitive operation. 6.1 over load protection the load current i out is limited by the device itself in case of over load or short circuit to ground. there are three steps of current limitation which are select ed automatically depending on the voltage v ds across the power dmos. please note that the voltage at the out pin is v bb - v ds . please refer to following figure for details. figure 10 current limitation (minimum values) current limitation is realized by increasing the resistance of the device which leads to ra pid temperature rise inside. a temperature sensor for each channel causes an overheat ed channel to switch off to prevent destruction. after cooling down with thermal hysteresis, the c hannel switches on again. please refer to figure 11 for details. figure 11 shut down by over temperature with current limitation in short circuit condition, the load current is initially limited to i l(lim) . after thermal restart, th e current limitation level is reduced to i l(scr) . the current limitatio n level is reset to i l(lim) by switching off the device ( v in = 0 v). current limit at ion. emf i l 5 101520 5 10 15 20 25 v ds 25 in i l i is t i l(lim) i l(scr) t t overload . emf t off(sc)
smart high-side power switch BTS5235-2G protection functions data sheet 16 rev.1.1, 2007-09-01 6.2 reverse polarity protection in case of reverse polarity, the intrinsic body diode causes power dissipation. additional power is dissipated by the integrated ground resistor. use following form ula for estimation of total power dissipation p diss(rev) in reverse polarity mode. (3) the reverse current through the intrinsic body diode has to be limited by the connected load. the current through sense pins is1 and is2 has to be limited (please refer to maximum ratings on page 8 ). the current through the ground pin (gnd) is limited internally by r gnd . the over-temperature protection is not active during reverse polarity. 6.3 over voltage protection in addition to the output clamp for inductive loads as described in section 5.1.3 , there is a clamp mechanism for over voltage protection. because of the integrated grou nd resistor, over voltage protection does not require external components. as shown in figure 12 , in case of supply voltages greater than v bb(az) , the power transistor switches on and the voltage across logic part is clamped. as a re sult, the internal ground potential rises to v bb - v bb(az) . due to the esd zener diodes, the potential at pin in1, in2 and sen rises almost to that potential, depending on the impedance of the connected circuitry. figure 12 over voltage protection 6.4 loss of ground protection in case of complete loss of the device ground connecti ons, but connected load ground, the BTS5235-2G securely changes to or stays in off state. p diss(rev) v ds(rev) i l ? () all channels v bb 2 r gnd -------------- + = out vbb overvolt age . emf v out r gnd logic gnd in is sen r sen r in zd esd zd az internal ground
data sheet 17 rev.1.1, 2007-09-01 smart high-side power switch BTS5235-2G protection functions 6.5 electrical characteristics unless otherwise specified: v bb = 9 v to 16 v, t j = -40 c to +150 c, typical values: v bb = 13.5 v, t j = 25 c pos. parameter symbol limit values unit conditions min. typ. max. over load protection 6.5.1 load current limitation i l(lim) 23?42a v ds = 7 v 14?28a v ds = 14 v 3?14 a v ds = 28 v 1) 2) 1) please note that an external forced v ds must not exceed v bb + | v out(cl) | 6.5.2 repetitive short circuit current limitation i l(scr) ?6?a t j = t j(sc) 2) 2) not subject to production test, specified by design 6.5.3 initial short ci rcuit shut down time t off(sc) 0.5 ms t jstart = 25 c 2) 6.5.4 thermal shut down temperature t j(sc) 150 170 2) ? c 6.5.5 thermal hysteresis ? t j ?7?k 2) reverse battery 6.5.6 drain-source diode voltage ( v out > v bb ) - v ds(rev ) ??900mv i l = -3.5 a v bb = -13.5 v t j = 150 c 6.5.7 reverse current through gnd pin - ignd ?65?ma v bb = -13.5 v 2) ground circuit 6.5.8 integrated resistor in gnd line r gnd 115 220 350 ? over voltage 6.5.9 over voltage protection v bb(az) 41 47 53 v i bb = 2 ma loss of gnd 6.5.10 output leakage current while gnd disconnected i l(gnd) ??1ma i in = 0, i sen = 0 , i is = 0, i gnd = 0 2) 3) 3) pins not connected
smart high-side power switch BTS5235-2G diagnosis data sheet 18 rev.1.1, 2007-09-01 7 diagnosis for diagnosis purpose, the BTS5235-2G provides an enhanced in tellisense signal at pins is1 and is2. this means in detail, the current sense signal i is , a proportional signal to the load current (ratio k ilis = i l / i is ), is provided as long as no failure mode (see table 1 ) occurs. in case of a failure mode, the voltage v is(fault) is fed to the diagnosis pin. figure 13 block diagram: diagnosis table 1 truth table 1) 1) l = low level, h = high level, z = high impedance, pot ential depends on leakage currents and external circuit operation mode input level output level diagnostic output sen = h sen = l normal operation (off) l gnd z z short circuit to gnd gnd z z over temperature z z z short circuit to v bb v bb v is = v is(fault) z open load < v out(ol) > v out(ol) z v is = v is(fault) z z normal operation (on) h ~ v bb i is = i l / k ilis z current limitation < v bb v is = v is(fault) z short circuit to gnd ~gnd v is = v is(fault) z over temperature z v is = v is(fault) z short circuit to v bb v bb i is < i l / k ilis z open load v bb zz channel 1 channel 2 i is2 out2 i is1 out1 is1 c in1 v out(ol) 0 1 v is( fa u lt) r in1 gate control in2 is2 diagnosis gnd r ol s ol load vbb sense. emf r is1 r is2 r lim r lim over temperature over load gate control r in2 open load @ off sen 0 1 r sen 0 1 latch
data sheet 19 rev.1.1, 2007-09-01 smart high-side power switch BTS5235-2G diagnosis 7.1 on-state diagnosis the standard diagnosis signal is a current sense signal proportional to the load current. the accuracy of the ratio ( k ilis = i l / i is ) depends on the temperature. please refer to following figure 14 for details. usually a resistor r is is connected to the current sense pin. it is recommended to use sense resistors r is > 500 ?. a typical value is 4.7 k ? . figure 14 current sense ratio k ilis 1) details about timings between the diagnosis signal i is and the output voltage v out and load current i l in on-state can be found in figure 15 . figure 15 timing of diagnosis signal in on-state in case of over-load as well as over-temperature, the voltage v is(fault) is fed to the diagnosis pins as long as the according input pin is high. this means, even if the ov erload disappears after the fi rst thermal shutdown or when the device keeps switching on and off in over-load co ndition (thermal toggling), the diagnosis signal ( v is(fault) ) is constantly availabl e. please refer to figure 16 for details. please note, that if the overload disappears before the first thermal shutdown, the diagnosis signal ( v is(fault) ) may remain for approximately 300 s longer than the duration of the overload. 1) the curves show the behavior based on characterization dat a. the marked points are guaranteed in this data sheet in section 7.4 (position 7.4.6 ). 1000 2000 3000 4000 5000 6000 7000 8000 0 0.5 1 1.5 2 2.5 3 3.5 4 k ilis i l /a dummy t j = 150 c dummy t j = -40 c switchon .emf in v out i is t t t i l t on t on t sis( o n) t sis( l c) off normal operation over load (current limitation) t sis( o vl ) v is(fault) / r s
smart high-side power switch BTS5235-2G diagnosis data sheet 20 rev.1.1, 2007-09-01 as a result open load and over load including over temperature can be differentiated in on-state. consideration must be taken in the sele ction of the sense resistor in order to distinguish nominal currents from the overload/short circuit fault state. a potential of 5 v at the sense pin can be achieved with a big sense resistor even with currents being much smalle r than the current limitation. figure 16 timing of diagnosis si gnal in over load condition 7.2 off-state diagnosis details about timings between the diagnosis signal i is and the output voltage v out and load current i l in off-state can be found in figure 17 . for open load diagnosis in off-state an external output pull-up resistor ( r ol ) is necessary. figure 17 timing of diagnosis signal in off-state for calculation of the pull-up resistor , just the external leakage current i leakage and the open load threshold voltage v out(ol) has to be taken into account. (4) i leakage defines the leakage current in the complete system e. g. caused by humidity. th ere is no internal leakage current from out to ground at BTS5235-2G. v bb(min) is the minimum supply voltage at which the open load diagnosis in off state must be ensured. to reduce the stand-by current of the system, an open load resistor switch ( s ol ) is recommended. overload. emf in i is t t i l on t sis( o vl ) off v is( fa u lt) / r s over temperature over load (current limitation) off i l(lim) switchoff.emf in v out i is t t t open load, pull-up resistor active v is( fa u lt) / r s on off t d ( fa u lt) t s( fa u lt) pul l -up resi stor inactive r ol v bb(min) v out(ol,max) ? i leakage ----------------------------------------------------------- =
data sheet 21 rev.1.1, 2007-09-01 smart high-side power switch BTS5235-2G diagnosis 7.3 sense enable function the diagnosis signals have to be switched on by a high signal at sense enable pin (sen). see figure 18 for details on the timing between sen pin and diagnosis signal i is . please note that the diagnosis is disabled, when no signal is provided at pin sen. figure 18 timing of sense enable signal the sen pin circuit is designed equally to the input pin. please refer to figure 5 for details. the resistors r lim are recommended to limit the current through the sense pins is 1 and is2 in case of reverse polarity and over voltage. please refer to maximum ratings on page 8 . the stand-by current of the BTS5235-2G is minimized, when both input pins (in1 and in2) and the sense enable pin (sen) are on low level. 7.4 electrical characteristics v bb = 9 v to 16 v, t j = -40 c to +150 c, v sen = 5 v, (unless otherwise specified) typical values: v bb = 13.5 v, t j = 25 c pos. parameter symbol limit values unit conditions min. typ. max. general definition 7.4.1 diagnostics signal in failure mode v is(fault) 5?9v v in = 0 v v out = v bb i is = 1 ma 7.4.2 diagnostics signal curr ent limitation in failure mode i is(lim) 3??ma v in = 0 v v out = v bb open load at off-state 7.4.3 open load detection threshold voltage v out(ol) 1.6 2.8 4.4 v 7.4.4 sense signal invalid after negative input slope t d(fault) ??1.2ms v in = 5 v to 0 v v out = v bb 7.4.5 fault signal settling time t s(fault) ??200 s v in = 0 v v out = 0 v to > v out(ol) i is = 1 ma t dis(sen) t sis( sen) t sen.emf t sis( sen) t t d is( sen) i is sen
smart high-side power switch BTS5235-2G diagnosis data sheet 22 rev.1.1, 2007-09-01 load current sense on-state 7.4.6 current sense ratio k ilis ?2870? v in = 5 v i l = 40 ma i l = 1.3 a i l = 2.2 a i l = 4.0 a 1000 2300 2410 2465 4035 3050 2920 2850 8000 3580 3380 3275 t j = -40 c i l = 40 ma i l = 1.3 a i l = 2.2 a i l = 4.0 a 1400 2465 2520 2580 3410 2920 2875 2870 6000 3275 3220 3160 t j = 150 c 7.4.7 current sense voltage limitation v is(lim) 5.0 6.2 7.5 v i is = 0.5 ma i l = 3.5 a 7.4.8 current sense leakage/offset current i is(lh) ??3.5 a v in = 5 v i l = 0 a 7.4.9 current sense leakage, while diagnosis disabled i is(dis) ??1 a v sen = 0 v i l = 3.5 a 7.4.10 current sense settling time to i is static 10% after positive input slope t sis(on) ?? 350 s v in = 0 v to 5 v i l = 3.5 a 1) 7.4.11 current sense settling time to i is static 10% after change of load current t sis(lc) ??50 s v in = 5 v i l = 1.3 a to 2.2 a 1) over load in on-state 7.4.12 over load detection current i l(ovl) 8? i l(lim) a v in = 5 v v is = v is(fault) 1) 7.4.13 sense signal settling time in overload condition t sis(ovl) ??200 s v out = 2 v v in = 0 v to 5 v sense enable 7.4.14 input resistance r sen 1.8 3.5 5.5 k ? 7.4.15 l-input level v sen(l) -0.3 ? 1.0 v 7.4.16 h-input level v sen(h) 2.5?5.7v 7.4.17 l-input current i sen(l) 31875 a v sen = 0.4 v 7.4.18 h-input current i sen(h) 10 38 75 a v sen = 5 v 7.4.19 current sense settling time t sis(sen) ?325 s v sen = 0 v to 5 v v in = 0 v v out > v out(ol) 7.4.20 current sense deactivation time t dis(sen) ??25 s v sen = 5 v to 0 v i l = 3.5 a r s = 5 k ? 1) 1) not subject to production test, specified by design v bb = 9 v to 16 v, t j = -40 c to +150 c, v sen = 5 v, (unless otherwise specified) typical values: v bb = 13.5 v, t j = 25 c pos. parameter symbol limit values unit conditions min. typ. max.
data sheet 23 rev.1.1, 2007-09-01 smart high-side power switch BTS5235-2G package outlines BTS5235-2G 8 package out lines BTS5235-2G figure 19 pg-dso-20-43 (plastic dual small outline package) green product (rohs compliant) to meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. green products are rohs-compliant (i.e pb-free finish on leads and suitable for pb-free soldering according to ipc/jedec j-std-020). 110 11 20 index marking 1) does not include plastic or metal protrusions of 0.15 max per side 2) does not include dambar protrusion of 0.05 max per side gps05094 2.65 max 0.1 0.2 -0.1 2.45 -0.2 +0.15 0.35 1.27 2) 0.2 24x -0.2 7.6 1) 0.35 x 45? 0.23 8? max +0.09 +0.8 ?.3 10.3 0.4 12.8 -0.2 1) for further information on alternative packages, please visit our website: http://www.infineon.com/packages . dimensions in mm
smart high-side power switch BTS5235-2G revision history data sheet 24 rev.1.1, 2007-09-01 9 revision history version date changes rev. 1.1 2008-09-01 modification of the figure 9 rev.1.0 2007-06-29 all pages: added new infineon logo creation of the green data sheet. first page: adding the green logo and the aec qualified adding the bullet aec qualified and the rohs compliant features package page modification of the package to be green. data sheet derived from the bts5235l grey revision 1.0: parameter 4.1.6: change to 110mj at 12v; added conditions vbb=13.5v changed figure 9. parameter 4.1.7: -24v min. -17v max.
edition 2007-09-01 published by infineon technologies ag 81726 munich, germany ? 9/17/08 infineon technologies ag all rights reserved. legal disclaimer the information given in this docu ment shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infine on technologies hereby disclaims any and all warranties and liabilities of any kind, including witho ut limitation, warranties of non-infrin gement of intellectua l property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies compon ents may be used in life-su pport devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safe ty or effectiveness of that de vice or system. life support devices or systems are intended to be implanted in the hu man body or to support an d/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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